PART |
Description |
Maker |
IS28F020-120PL IS28F020-120PLI IS28F020-120T IS28F |
262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 262,144 x 8 CMOS FLASH MEMORY 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 CAP 33UF 6V 20% TANT SMD-3216-18 TR-7
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Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
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IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32 131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
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INTEGRATED SILICON SOLUTION INC Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
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LTC1262 LTC1262C LTC1262CN8 LTC1262CS8 LTC1262I LT |
12V, 30mA Flash Memory Programming Supply 12V的,30mA的闪存编程电 12V/ 30mA Flash Memory Programming Supply From old datasheet system
|
Linear Technology, Corp. LINER[Linear Technology]
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M28F220-90M1TR M28F220-90M6TR -M28F220 STMICROELEC |
256K X 8 FLASH 12V PROM, 90 ns, PDSO44 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb???瀛???ī 256K X 8 FLASH 12V PROM, 70 ns, PDSO44
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STMICROELECTRONICS
|
CAT28F020HI-12T CAT28F020 CAT28F020HI-90T CAT28F02 |
2 Megabit CMOS Flash Memory 2 Mb CMOS Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|
AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k) Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位)的CMOS 12.0伏,整体擦除闪存 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32 2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
89C535 89C538 P89C535NBAA P89C536NBAA P89C536NBBB |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
|
PHILIPS[Philips Semiconductors]
|
P89C536NBAA P89C536NBBB P89C535NBAA |
CMOS single-chip 8-bit microcontrollers with FLASH program memory
|
Philips
|
AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125 CMOS Dual Binary Up-Counter 16-SO -55 to 125 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
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ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
|
ATMEGA162 ATMEGA162L ATMEGA162V |
16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 16 MIPS throughput at 16 MHz. 16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 8 MIPS throughput at 8 MHz. 3 Volt Operation. 16-Kbyte self-programming Flash Program Memory, 1-Kbyte SRAM, 512 Byte EEPROM, JTAG interface for on-chip-debug. Up to 1 MIPS throughput at 1 MHz.
|
Atmel
|
ATTINY15L ATTINY15L-1PC ATTINY15L-1PI ATTINY15L-1S |
8-bit AVR Microcontroller with 1K Byte Flash 1-Kbyte In-System programmable Flash Program Memory, 64-Byte EEPROM, 32-Byte Register File, 4-channel 10-bit A/D, Up to 1.6 MIPS throughput at 1.6 MHz. 3-volt operation
|
Atmel Corp. ATMEL[ATMEL Corporation]
|
LT1109A LT1109A-12 LT1109A-5 LT1109ACN8 LT1109ACN8 |
Micropower DC/DC Converter Flash Memory VPP Generator Adjustable and Fixed 5V, 12V From old datasheet system Micropower DC/DC Converter Flash Memory VPP Generator Adjustable and Fixed 5V/ 12V
|
http:// LINER[Linear Technology]
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